Hydrogen Passivation of B-O Defects in Czochralski Silicon
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چکیده
منابع مشابه
Passivation of copper in silicon by hydrogen
The structures and energies of model defects consisting of copper and hydrogen in silicon are calculated using the AIMPRO local-spin-density functional method. For isolated copper atoms, the lowest energy location is at the interstitial site with Td symmetry. Substitutional copper atoms are found to adopt a configuration with D2d symmetry. We conclude that the symmetry is lowered from Td due to...
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ژورنال
عنوان ژورنال: Energy Procedia
سال: 2013
ISSN: 1876-6102
DOI: 10.1016/j.egypro.2013.07.317